Rank Modulation for Flash Memories

Jiang, Anxiao (Andrew) and Mateescu, Robert and Schwartz, Moshe and Bruck, Jehoshua (2008) Rank Modulation for Flash Memories. Technical Report. California Institute of Technology, Pasadena, CA. [CaltechPARADISE:2008.ETR086]

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Abstract

We explore a novel data representation scheme for multi-level flash memory cells, in which a set of n cells stores information in the permutation induced by the different charge levels of the individual cells. The only allowed charge-placement mechanism is a “push-to-the-top” operation which takes a single cell of the set and makes it the top-charged cell. The resulting scheme eliminates the need for discrete cell levels, as well as overshoot errors, when programming cells. We present unrestricted Gray codes spanning all possible n-cell states and using only “push-to-the-top” operations, and also construct balanced Gray codes. We also investigate optimal rewriting schemes for translating arbitrary input alphabet into n-cell states which minimize the number of programming operations.

EPrint Type:	Monograph (Technical Report)
Additional Information:	Available online as http://www.paradise.caltech.edu/papers/etr086.pdf
Subjects:	All Records
ID Code:	114
Deposited By:	Caltech Library System
Deposited On:	05 February 2008
Record Number:	CaltechPARADISE:2008.ETR086
Official Persistent URL:	http://resolver.caltech.edu/CaltechPARADISE:2008.ETR086
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