On the capacity of bounded rank modulation for flash memories

Wang, Zhiying and Jiang, Anxiao (Andrew) and Bruck, Jehoshua (2009) On the capacity of bounded rank modulation for flash memories. Technical Report. California Institute of Technology, Pasadena, CA. [ETR091]

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Abstract

Rank modulation has been recently introduced as a new information representation scheme for flash memories. Given the charge levels of a group of flash cells, sorting is used to induce a permutation, which in turn represents data. Motivated by the lower sorting complexity of smaller cell groups, we consider bounded rank modulation, where a sequence of permutations of given sizes are used to represent data. We study the capacity of bounded rank modulation under the condition that permutations can overlap for higher capacity.

EPrint Type:	Monograph (Technical Report)
Subjects:	All Records
ID Code:	120
Deposited By:	Kristin Buxton
Deposited On:	10 May 2009
Record Number:	ETR091
Official Persistent URL:	http://resolver.caltech.edu/CaltechPARADISE:2008.ETR091
Usage Policy:	You are granted permission for individual, educational, research and non-commercial reproduction, distribution, display and performance of this work in any format.

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